Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Low drain-source on-resistance:
RDS(on) ≤ 1mΩ (max)
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- DESCRITION
- reliable device for use in a wide variety of applications
IRLI3705N,IIRLI3705N
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