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IRLI3705NPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview:  Logic –Level Gate Drive  Advanced Process Technology  Isolated Package  High Voltage Isolation = 2.5KVRMS   Sink to Lead Creepage Dist. = 4.8mm  Fully Avalanche Rated  Lead-Free IRLI3705NPbF HEXFET® Power MOSFET VDSS RDS(on) ID 55V 0.

General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Full Pak eliminates the need for additional insulating hardware in commercial-industrial applications.

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