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IRLML6302 - P-Channel MOSFET

Key Features

  • With SOT-23 package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Isc P-Channel MOSFET Transistor ·FEATURES ·With SOT-23 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -20 VGSS Gate-Source Voltage ±12 ID Drain Current-ContinuousTc=25℃ Tc=70℃ -0.78 -0.26 IDM Drain Current-Single Pulsed -4.9 PD Total Dissipation @TC=25℃ 540 Tch Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A mW ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-a) Channel-to-ambient thermal resistance MAX 230 UNIT ℃/W IRLML6302 isc website：www.iscsemi.