Datasheet Details
| Part number | IRLML6302TR |
|---|---|
| Manufacturer | UMW |
| File Size | 786.70 KB |
| Description | -20V P-ChanneI MOSFET |
| Datasheet | IRLML6302TR-UMW.pdf |
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Overview: UMW IRLML6302TR -20V P-ChanneI MOSFET 1.
| Part number | IRLML6302TR |
|---|---|
| Manufacturer | UMW |
| File Size | 786.70 KB |
| Description | -20V P-ChanneI MOSFET |
| Datasheet | IRLML6302TR-UMW.pdf |
|
|
|
SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current æ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak diode Recovery dv/dt ç Junction and Storage Temperature Range TA=25°C TA=70°C TA=25°C Symbol ID IDM PD VGS dv/dt TJ,TSTG D G S Value Units -0.78 -0.62 A -4.9 540 mW 4.3 mW/°C ±12 V -5 V/ns -55 to 150 °C 4.Thermal resist ance rating Parameter Maximum Junction-to-Ambien é Symbol Typ Max Units RθJA 230 °C/W UTD Semiconductor Co.,Limited .umw-ic.
Nov.2024 1 of 10 .umw-ic.
UMW IRLML6302TR -20V P-ChanneI MOSFET 5.Electrical Characteristics TJ=25°C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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IRLML6302 | HEXFET Power MOSFET | International Rectifier |
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IRLML6302 | P-Channel MOSFET | INCHANGE |
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IRLML6302PBF-1 | Power MOSFET | International Rectifier |
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