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IRLML6302TR - -20V P-ChanneI MOSFET

General Description

SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current æ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak diode Recovery

Key Features

  • VDS (V)=-20V RDS(ON).

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Datasheet Details

Part number IRLML6302TR
Manufacturer UMW
File Size 786.70 KB
Description -20V P-ChanneI MOSFET
Datasheet download datasheet IRLML6302TR Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UMW IRLML6302TR -20V P-ChanneI MOSFET 1.Features VDS (V)=-20V RDS(ON)<90mΩ(VGS=-4.5V) RDS(ON)<110mΩ(VGS=-2.7V) Lead-Free P-Channel MOSFET SOT-23 Footprint Available in Tape and Reel Fast Switching 2.Pinning information Pin Symbol Description SOT-23 3 1 G GATE 2 S SOURCE 3 D DRAIN 1 2 3.Maximum ratings (TA=25°C unless otherwise noted) Parameter Continuous Drain Current, VGS @ -4.5V Continuous Drain Current, VGS @ -4.5V Pulsed Drain Current æ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak diode Recovery dv/dt ç Junction and Storage Temperature Range TA=25°C TA=70°C TA=25°C Symbol ID IDM PD VGS dv/dt TJ,TSTG D G S Value Units -0.78 -0.62 A -4.9 540 mW 4.3 mW/°C ±12 V -5 V/ns -55 to 150 °C 4.