Datasheet4U Logo Datasheet4U.com

IXFH56N30X3 - N-Channel MOSFET

Key Features

  • With TO-247 packaging.
  • With low gate drive requirements.
  • Easy to drive.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXFH56N30X3 Power MOSFET IXYS
IXFH50N20 Power MOSFET IXYS Corporation
IXFH50N30Q3 Power MOSFET IXYS
IXFH50N60P3 Power MOSFET IXYS Corporation
IXFH50N60X Power MOSFET IXYS

Other Datasheets by Inchange Semiconductor

Part Number Description
IXFH50N60X N-Channel MOSFET
IXFH102N15T N-Channel MOSFET
IXFH110N15T2 N-Channel MOSFET
IXFH12N65X2 N-Channel MOSFET
IXFH130N15X3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 56 IDM Drain Current-Single Pulsed 112 PD Total Dissipation 320 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.39 UNIT ℃/W IXFH56N30X3 isc website：www.iscsemi.