IXFP8N85XM
Key Features
- High power dissipation
- Static drain-source on-resistance: RDS(on) ≤ 850mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | IXFP8N85XM |
|---|---|
| Description | N-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 257.33 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| IXFP8N85XM | IXYS | Power MOSFET |
| IXFP8N85X | IXYS | Power MOSFET |