IXTA120N04T2
IXTA120N04T2 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Static drain-source on-resistance:
RDS(on) ≤ 6.1mΩ@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converters
- High Current Switching Applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Operating Junction Temperature
-55~175
Tstg
Storage Temperature
-55~175
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Junction-to-case thermal resistance
MAX 0.75
UNIT ℃/W isc website：.iscsemi.cn
1 isc & iscsemi is registered trademark isc N-Channel MOSFET...
