The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TrenchT2TM Power MOSFET
IXTA120N04T2 IXTP120N04T2
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on) ≤
40V 120A 6.1mΩ
TO-263
Symbol
VDSS VDGR
VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque (TO-220) TO-263 TO-220
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = ± 20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 150°C
RDS(on)
VGS = 10V, ID = 25A, Notes 1, 2
Maximum Ratings 40 40
V V
± 20 V
120 A 360 A
50 A 400 mJ
200 W
-55 ...
IXTA120N04T2 Datasheet
