IXTA1N100
Key Features
- Static drain-source on-resistance: RDS(on) ≤ 11Ω@VGS=10V
- Fully characterized avalanche voltage and current
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- Part: IXTA1N100
- Description: N-Channel MOSFET
- Category: MOSFET
- Manufacturer: Inchange Semiconductor
- Size: 250.46 KB