IXTA1R4N100P Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·
IXTA1R4N100P Key Features
- Static drain-source on-resistance
- APPLICATION -DC/DC Converter -Switch-Mode and Resonant-Mode Power Supplies
