IXTA1R4N100P Datasheet | Specifications & PDF Download

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IXTA1R4N100P Power MOSFET

PolarTM Power MOSFETs N-Channel Enhancement Mode A.

IXYS

IXTA1R4N100P - Power MOSFET

 PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω .
Rating: 1 ★ (2 votes)
INCHANGE

IXTA1R4N100P - N-Channel MOSFET

 isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and curr.
Rating: 1 ★ (1 votes)
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