IXTA28P065T - P-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on)≤45mΩ.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTA28P065T P-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTA28P065T

Datasheet Details

Part number	IXTA28P065T
Manufacturer	Inchange Semiconductor
File Size	248.43 KB
Description	P-Channel MOSFET
Datasheet	IXTA28P065T Datasheet
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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor IXTA28P065T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -65 V VGS Gate-Source Voltage ±15 V ID Drain Current-Continuous -28 A IDM Drain Current-Single Pulsed -90 A PD Total Dissipation @TC=25℃ 83 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-case thermal resistance MAX 1.5 UNIT ℃/W isc website：www.iscsemi.

Published: Nov 4, 2020 |