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IXTA28P065T - Power MOSFET

Features

  • z International Standard Packages z Avalanche Rated z Extended FBSOA z Fast Intrinsic Diode z Low RDS(ON) and QG Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS = 0V, ID = - 250μA VGS(th) VDS = VGS, ID = - 250μA IGSS VGS = ± 15V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 125°C RDS(on) VGS = -10V, ID = 0.5.
  • ID25, Note 1 Characteristic Values Min. Typ. Max. - 65 V - 2.5 - 4.5 V ±50 nA - 3 μA -100 μA 45 mΩ Advantages z Easy to Mount z Space Sav.

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXTA) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA ES PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-220) TO-220 TO-263 Maximum Ratings - 65 V - 65 V ±15 V ±25 V - 28 A - 90 A - 28 A 200 mJ 83 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 3.0 g 2.
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