Datasheet4U Logo Datasheet4U.com

IXTA60N10T - N-Channel MOSFET

Datasheet Summary

Features

  • With TO-263(D2PAK) packaging.
  • Low gate charge.
  • High speed switching.
  • Low on-resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IXTA60N10T

Datasheet Details

Part number IXTA60N10T
Manufacturer INCHANGE
File Size 199.03 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTA60N10T Datasheet
Additional preview pages of the IXTA60N10T datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXTA60N10T ·FEATURES ·With TO-263(D2PAK) packaging ·Low gate charge ·High speed switching ·Low on-resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 180 PD Total Dissipation 176 Tj Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.85 UNIT ℃/W isc website：www.iscsemi.
Published: |