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IXTA60N10T - Power MOSFET

This page provides the datasheet information for the IXTA60N10T, a member of the IXTP60N10T Power MOSFET family.

Datasheet Summary

Features

  • Ultra-Low On Resistance.
  • Avalanche Rated.
  • Low Package Inductance - Easy to Drive and to Protect.
  • 175C Operating Temperature.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

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Datasheet preview – IXTA60N10T

Datasheet Details

Part number IXTA60N10T
Manufacturer IXYS
File Size 288.95 KB
Description Power MOSFET
Datasheet download datasheet IXTA60N10T Datasheet
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Full PDF Text Transcription

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TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 TO-263 2.5 TO-220 3.0 °C °C N/lb Nm/lb.
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