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IXTA60N10T - Power MOSFET

Download the IXTA60N10T datasheet PDF. This datasheet also covers the IXTP60N10T variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ultra-Low On Resistance.
  • Avalanche Rated.
  • Low Package Inductance - Easy to Drive and to Protect.
  • 175C Operating Temperature.
  • Fast Intrinsic Diode Advantages.
  • Easy to Mount.
  • Space Savings.
  • High Power Density.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTP60N10T_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTA60N10T (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTA60N10T. For precise diagrams, and layout, please refer to the original PDF.

TrenchTM Power MOSFET IXTA60N10T IXTP60N10T N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Tes...

View more extracted text
DGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient Maximum Ratings 100 V 100 V  20 V  30 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C 60 180 10 500 176 -55 ... +175 175 -55 ... +175 A A A mJ W  C  C  C Maximum Lead Temperature for Soldering 300 1.6 mm (0.062in.) from Case for 10s 260 Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 TO-263 2.5 TO-220 3.0 °C °C N/lb Nm/lb.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTA60N10T N-Channel MOSFET INCHANGE

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