Datasheet4U Logo Datasheet4U.com

IXTH15N60 - N-Channel MOSFET

General Description

purpose applications.

Key Features

  • Drain Current ID= 20A@ TC=25℃.
  • Drain Source Voltage- : VDSS= 600V(Min).
  • Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
IXTH15N50L2 Power MOSFET IXYS
IXTH15N70 N-Channel Enhancement Mode InterFET Corporation
IXTH150N15X4 Power MOSFET IXYS
IXTH152N085T N-Channel MOSFET IXYS Corporation
IXTH102N15T Power MOSFET IXYS

Other Datasheets by Inchange Semiconductor

Part Number Description
IXTH15N50L2 N-Channel MOSFET
IXTH152N085T N-Channel MOSFET
IXTH102N15T N-Channel MOSFET
IXTH102N20T N-Channel MOSFET
IXTH110N10L2 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.