IXTH1N100 Overview
·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max. 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH1N100 TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS...
IXTH1N100 Key Features
- Drain Current ID= 1.5A@ TC=25℃ -Drain Source Voltage
