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Advance Technical Information
High Voltage MOSFET
N-Channel Enhancement Mode Avalanche Energy Rated
IXTH 1N100 IXTT 1N100
V DSS
ID25
RDS(on)
= 1000 V = 1.5 A = 11 Ω
Symbol
Test Conditions
V DSS
VDGR VGS VGSM ID25 I
DM
T J
= 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
T C
=
25°C,
pulse
width
limited
by
T JM
IAR EAR EAS dv/dt
PD T
J
TJM T
stg
Md Weight
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C
Mounting torque (TO-247) TO-268 TO-247
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
1000
V
1000
V
±20
V
±30
V
1.5
A
6
A
1.5
A
6
mJ
200
mJ
3
V/ns
60
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
IXTH1N100 Datasheet
