IXTH1N100 Description
+150 °C 1.13/10 Nm/lb.in. 4 g 6 g 300 °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
- Part: IXTH1N100
- Manufacturer: IXYS
- Size: 71.28 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTH1N100 | N-Channel MOSFET |