Inchange Semiconductor IXTH200N075T
N-Channel MOSFET
| Part No. | IXTH200N075T |
|---|---|
| Datasheet | IXTH200N075T Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on) ≤ 5.0mΩ@VGS=10V●Fully characterized avalanche voltage and current
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●APPLICATION
●DC/DC Converters
●High Current Switching
APPLICATIONS
●ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 200 A IDM Drain Current-Single Pulsed 540 A PD Total Dissipation @TC=25℃ 430 W Tj Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth(j-c) Junction-to-case thermal resistance 0.35 UNIT ℃/W IXTH200N075T isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor IXTH200N075T
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 250μA 75 V VGS(th) Gate Thre...