IXYS IXTH200N075T
Power MOSFET
| Part No. | IXTH200N075T |
|---|---|
| Datasheet | IXTH200N075T Download |
| Manufacturer |  IXYS |
| Description | Power MOSFET |
| Buy | Stock & Price |
MAXIMUM RATINGS
75 75 ± 20 200 75 540 25 750 V V V A A A A mJ 3 V/ns 430 W -55 ... +175 175 -55 ... +175 °C °C °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. 5.5 g 6g Symbol Test Conditions (TJ = 25°C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 μA VGS(th) VDS = VGS, ID = 250 μA IGSS VGS = ± 20 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V TJ = 150°C RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 Characteristic Values Min. Typ. Max. 75 V 2.0 4.0 V ± 200 nA 5 μA 250 μA 4.0 5.0 mΩ TO-247 (IXTH) G DS TO-3P (IXTQ) (TAB) G D S (TAB) G = Gate S = Source D = Drain TAB = DrainFEATURES
z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z Easy to mount z Space savings z High power density © 2006 IXYS CORPORATION All rights reserved DS99634 (11/06) IXTH200N075T IXTQ200N075T Symbol Test Conditions (TJ = 25°C unless otherwise specified) gfs VDS= 10 V; ID = 60 A, Note 1 Ciss Coss Crss VGS = 0 V, VDS = 25 V, f = 1 MHz t...
