IXTH22N50P - N-Channel MOSFET

Inchange Semiconductor

Key Features

With TO-3PN packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTH22N50P n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	IXTH22N50P
Manufacturer	Inchange Semiconductor
File Size	300.80 KB
Description	N-Channel MOSFET
Datasheet	IXTH22N50P Datasheet

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Full PDF Text Transcription (Reference)

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBO L PARAMETER VALUE VDSS Drain-Source Voltage 500 UNIT V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pulsed 66 A PD Total Dissipation 350 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.35 UNIT ℃/W IXTH22N50P isc website：www.iscsemi.