• Part: IXTH22N50P
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 189.35 KB
Download IXTH22N50P Datasheet PDF
IXTH22N50P page 2
Page 2
IXTH22N50P page 3
Page 3

Datasheet Summary

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode PLUS220 (IXTV) IXTV22N50P IXTV22N50PS IXTQ22N50P IXTH22N50P PLUS220SMD (IXTV_S) VDSS = 500V ID25 = 22A ≤RDS(on) 270mΩ trr(typ) = 400ns TO-3P (IXTQ) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight G DS D (TAB) D (TAB) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient Maximum Ratings 500 500 ± 30 ± 40 TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 22 50 22 750 10 350 -55 ... +150 A A A mJ V/ns W °C 150 °C -55 ... +150 °C Maximum Lead...