IXTH30N60P - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTH30N60P
Manufacturer	INCHANGE
File Size	324.86 KB
Description	N-Channel MOSFET
Datasheet	IXTH30N60P Datasheet
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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 30 A IDM Drain Current-Single Pulsed 80 A PD Total Dissipation 540 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.23 UNIT ℃/W IXTH30N60P isc website：www.iscsemi.

Published: Nov 11, 2020 |