IXTH36P10 - P-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 75mΩ@VGS= -10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTH36P10
Manufacturer	INCHANGE
File Size	335.46 KB
Description	P-Channel MOSFET
Datasheet	IXTH36P10 Datasheet
Additional preview pages of the IXTH36P10 datasheet.

📁 Similar Datasheet

IXTH36P10 - Standard Power MOSFET (IXYS Corporation)
IXTH36N50P - PolarHV Power MOSFET (IXYS)
IXTH300N04T2 - Power MOSFET (IXYS)
IXTH30N45 - N-Channel MOSFET (IXYS)
IXTH30N50 - Power MOSFET (IXYS Corporation)
IXTH30N50L - Power MOSFET (IXYS)
IXTH30N50L2 - Power MOSFET (IXYS)
IXTH30N50P - PolarHV Power MOSFET (IXYS)
IXTH30N60L2 - Power MOSFET (IXYS)
IXTH30N60P - PolarHV Power MOSFET (IXYS)

Other Datasheets by INCHANGE

IXTH36N50P - N-Channel MOSFET
IXTH300N04T2 - N-Channel MOSFET
IXTH30N50 - N-Channel MOSFET
IXTH30N50L - N-Channel MOSFET
IXTH30N50L2 - N-Channel MOSFET
IXTH30N50P - N-Channel MOSFET
IXTH30N60L2 - N-Channel MOSFET
IXTH30N60P - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 75mΩ@VGS= -10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -36 A IDM Drain Current-Single Pulsed -144 A PD Total Dissipation @TC=25℃ 180 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.

Published: Nov 12, 2020 |