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IXTH36P10

Manufacturer: IXYS (now Littelfuse)

IXTH36P10 datasheet by IXYS (now Littelfuse).

IXTH36P10 datasheet preview

IXTH36P10 Datasheet Details

Part number IXTH36P10
Datasheet IXTH36P10_IXYSCorporation.pdf
File Size 85.35 KB
Manufacturer IXYS (now Littelfuse)
Description Standard Power MOSFET
IXTH36P10 page 2 IXTH36P10 page 3

IXTH36P10 Overview

+150 °C 300 °C 1.13/10 Nm/lb.in. 6 g TO-247 AD D (TAB) G = Gate, S = Source, D = Drain, TAB = Drain.

IXTH36P10 Key Features

  • International standard package
  • Low RDS (on) HDMOSTM process
  • Rugged polysilicon gate cell structure
  • Unclamped Inductive Switching (UIS)
  • Low package inductance (<5 nH)
  • easy to drive and to protect
  • 3.0 TJ = 25°C TJ = 125°C

IXTH36P10 from other manufacturers

View IXTH36P10 datasheet index

Brand Logo Part Number Description Other Manufacturers
INCHANGE Logo IXTH36P10 P-Channel MOSFET INCHANGE
IXYS (now Littelfuse) logo - Manufacturer

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IXTH36P10 Distributor

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