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IXTH36P10 - Standard Power MOSFET

Key Features

  • International standard package JEDEC TO-247 AD.
  • Low RDS (on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Advance Technical Information Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 36P10 VDSS ID25 RDS(on) = -100 V = -36 A = 75 mΩ Symbol VDSS VDGR VGS VGSM I D25 I DM IAR EAR PD T J T JM Tstg TL M d Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque Maximum Ratings -100 V -100 V ±20 V ±30 V -36 A -144 A -36 A 30 mJ 180 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 1.13/10 Nm/lb.in.