IXTH50P10 - P-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

IXTH50P10 P-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTH50P10

Datasheet Details

Part number	IXTH50P10
Manufacturer	Inchange Semiconductor
File Size	334.51 KB
Description	P-Channel MOSFET
Datasheet	IXTH50P10 Datasheet
Additional preview pages of the IXTH50P10 datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 55mΩ@VGS= -10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·Uninterruptible power supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -50 A IDM Drain Current-Single Pulsed -200 A PD Total Dissipation @TC=25℃ 300 W Tj Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 0.

Published: Nov 12, 2020 |