IXTH50P10 Description
+150 °C 300 °C 260 °C 1.13 / 10 Nm/lb.in. -100 V - 3.0 - 5.0 V ±100 nA - 25 μA -1 mA 55 mΩ G D S TO-268 (IXTT) (TAB) G S (TAB) G = Gate S = Source D = Drain TAB = Drain.
IXTH50P10 Key Features
- easy to drive and to protect
- Part: IXTH50P10
- Manufacturer: IXYS
- Size: 120.87 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTH50P10 | P-Channel MOSFET |