IXTH5N100A - N-Channel MOSFET

Description

purpose applications.

Features

Drain Current ID= 5A@ TC=25℃.
Drain Source Voltage- : VDSS= 1000V(Min).
Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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IXTH5N100A N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTH5N100A

Datasheet Details

Part number	IXTH5N100A
Manufacturer	Inchange Semiconductor
File Size	332.72 KB
Description	N-Channel MOSFET
Datasheet	IXTH5N100A Datasheet
Additional preview pages of the IXTH5N100A datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor FEATURES ·Drain Current ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.

Published: Nov 11, 2020 |