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Standard Power MOSFET
VDSS IXTH / IXTM 5N100 IXTH / IXTM 5N100A 1000 V 1000 V
ID25 5A 5A
RDS(on) 2.4 Ω 2.0 Ω
N-Channel Enhancement Mode
Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C
Maximum Ratings 1000 1000 ±20 ±30 5 20 180 -55 ... +150 150 -55 ... +150 V V V V A A W °C °C °C
TO-247 AD (IXTH)
D (TAB)
TO-204 AA (IXTM)
D G = Gate, S = Source,
G
Mounting torque
1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C
D = Drain, TAB = Drain
Maximum lead temperature for soldering 1.6 mm (0.062 in.
IXTH5N100A Datasheet
