IXTH60N15 - N-Channel MOSFET

Datasheet Summary

Features

With TO-247 packaging.
With low gate drive requirements.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTH60N15
Manufacturer	INCHANGE
File Size	254.68 KB
Description	N-Channel MOSFET
Datasheet	IXTH60N15 Datasheet
Additional preview pages of the IXTH60N15 datasheet.

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isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 60 IDM Drain Current-Single Pulsed 240 PD Total Dissipation 275 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.4 UNIT ℃/W IXTH60N15 isc website：www.iscsemi.

Published: Oct 7, 2020 |