IXTH60N15
IXTH60N15 is Power MOSFET manufactured by IXYS.
Advance Technical Information
Standard Power MOSFET
N-Channel Enhancement Mode
IXTH 60N15
VDSS = 150 V ID (cont) = 60 A RDS(on) = 33 mΩ
Symbol Test Conditions
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg Md Weight
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Mounting torque
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
±20
±30
30 mJ
5 V/ns
TO-247 AD
D (TAB)
G = Gate, S = Source,
D = Drain, TAB =...
