IXTK128N15
IXTK128N15 is N-Channel MOSFET manufactured by Inchange Semiconductor.
FEATURES
- Drain Source Voltage-
: VDSS= 150V(Min)
- Static drain-source on-resistance
: RDS(on) ≤ 15mΩ@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converters
- High Current Switching Applications
- ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
Gate-Source Voltage
±20
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
- THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c) Junction-to-case thermal resistance
MAX 0.23
UNIT ℃/W
IXTK128N15 isc website：.iscsemi.cn...
