IXTK128N15
IXTK128N15 is Power MOSFET manufactured by IXYS.
national standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Fast switching times Applications Motor controls DC choppers Switched-mode power supplies Advantages
1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264
0.7/6 Nm/lb.in. 10 g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1 m A VDS = VGS, ID = 250 µA VGS = ±20 V DC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 150 2.0 4.0 ±100 50 2 15 V V n A µA m A mΩ
Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
© 2003 IXYS All rights reserved
DS98952(03/03)
IXTK 128N15
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. 50 65 6000 S p F p F p F ns ns ns ns n C n C n C 0.23 0.15 K/W K/W
TO-264 AA Outline gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK
VDS = 10 V; ID = 60A, pulse test
VGS = 0 V, VDS = 25 V, f = 1 MHz
1700 680 28
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 Ω (External)
30 115 17 240
VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25
50 95
Millimeter Min. Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30
Min.
Inches Max.
Source-Drain Diode Symbol IS ISM VSD Trr QRM Test Conditions VGS = 0 V
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 128 512 1.5 A A V ns µC
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 25A, -di/dt = 100 A/µs, VR = 100V 250 3
.190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800...
