Datasheet Summary
isc N-Channel MOSFET Transistor
- Features
- Drain Source Voltage-
: VDSS= 600V(Min)
- Static drain-source on-resistance
: RDS(on) ≤ 0.74Ω@VGS=10V
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
- APPLICATION
- DC/DC Converter
- Ideal for high-frequency switching and synchronous rectification
-...
