IXTP10N60P Description
+150 °C 300 260 1.13 / 10 2.5 3.0 °C °C Nm/lb.in. g g Characteristic Values Min. 600 V 3.0 5.5 V ±100 nA 5 μA 50 μA 740 mΩ G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain.
IXTP10N60P is Power MOSFET manufactured by IXYS.
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
IXTP10N60P | N-Channel MOSFET |
IXYS |
IXTP10N60PM | PolarHV Power MOSFET |
|
Inchange Semiconductor |
IXTP10N60PM | N-Channel MOSFET |
+150 °C 300 260 1.13 / 10 2.5 3.0 °C °C Nm/lb.in. g g Characteristic Values Min. 600 V 3.0 5.5 V ±100 nA 5 μA 50 μA 740 mΩ G S D (Tab) TO-220AB (IXTP) GD S D (Tab) G = Gate S = Source D = Drain Tab = Drain.