Datasheet4U Logo Datasheet4U.com

IXTP12N65X2 - N-Channel MOSFET

Datasheet Summary

Features

  • Drain Source Voltage- : VDSS= 650V(Min).
  • Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V.
  • Fully characterized avalanche voltage and current.
  • 100% Avalanche Tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

Datasheet preview – IXTP12N65X2

Datasheet Details

Part number IXTP12N65X2
Manufacturer INCHANGE
File Size 249.78 KB
Description N-Channel MOSFET
Datasheet download datasheet IXTP12N65X2 Datasheet
Additional preview pages of the IXTP12N65X2 datasheet.

📁 Similar Datasheet

Other Datasheets by INCHANGE

Full PDF Text Transcription

Click to expand full text
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 650V(Min) ·Static drain-source on-resistance: RDS(on) ≤ 300mΩ@VGS=10V ·Fully characterized avalanche voltage and current ·100% Avalanche Tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Switched mode power supplies ·DC-DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 12 IDM Drain Current-Single Pulsed 24 PD Total Dissipation @TC=25℃ 180 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Junction-to-case thermal resistance
Published: |