Datasheet4U Logo Datasheet4U.com

IXTP12N65X2M - Power MOSFET

Key Features

  • International Standard Package.
  • Plastic Overmolded Tab.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • 2500V~ Electrical Isolation.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
X2-Class Power MOSFET (Electrically Isolated Tab) N-Channel Enhancement Mode IXTP12N65X2M Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C, Limited by TJM TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 50/60 Hz, 1 Minute Mounting Torque Maximum Ratings 650 V 650 V 30 V 40 V 12 A 24 A 6 A 300 mJ 15 V/ns 40 W -55 ... +150 C 150 C -55 ... +150 C 300 °C 260 °C 2500 V~ 1.13 / 10 2.5 Nm/lb.