IXTP1R4N100P - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTP1R4N100P
Manufacturer	INCHANGE
File Size	247.08 KB
Description	N-Channel MOSFET
Datasheet	IXTP1R4N100P Datasheet
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isc N-Channel MOSFET Transistor IXTP1R4N100P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11.8Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 1.4 IDM Drain Current-Single Pulsed 3.0 PD Total Dissipation @TC=25℃ 63 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal resistance MAX 1.

Published: Nov 16, 2020 |