• Part: IXTP1R4N100P
  • Description: Power MOSFET
  • Manufacturer: IXYS
  • Size: 261.49 KB
Download IXTP1R4N100P Datasheet PDF
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Datasheet Summary

PolarTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated IXTY1R4N100P IXTA1R4N100P IXTP1R4N100P VDSS ID25 RDS(on) = 1000V = 1.4A ≤ 11.8Ω TO-252 (IXTY) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Maximum Ratings 1000 1000 ±20 ±30 1.4 3.0 1.4 100 10 63 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W °C °C °C °C °C N/lb. Nm/lb.in. g g g Features z z z z z S D (Tab) TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) D...