IXTP1R4N60P - N-Channel MOSFET

Datasheet Summary

Features

Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	IXTP1R4N60P
Manufacturer	INCHANGE
File Size	247.18 KB
Description	N-Channel MOSFET
Datasheet	IXTP1R4N60P Datasheet
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isc N-Channel MOSFET Transistor IXTP1R4N60P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.0Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 1.4 IDM Drain Current-Single Pulsed 2.

Published: Nov 16, 2020 |