IXTP1R4N60P
IXTP1R4N60P is Power MOSFET manufactured by IXYS.
- Part of the IXTU1R4N60P comparator family.
- Part of the IXTU1R4N60P comparator family.
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTU1R4N60P IXTY1R4N60P IXTP1R4N60P
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-220) TO-251 TO-252 TO-220
Maximum Ratings
30
40
75 mJ
V/ns
-55 ... +150
C
C
-55 ... +150
C
°C
°C
1.13 / 10
Nm/lb.in
0.40...
