Full PDF Text Transcription for IXTP1R6N50P (Reference)
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isc N-Channel MOSFET Transistor IXTP1R6N50P ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.5Ω ·Fully characterized avalanche voltage and current ·100% avalanch...
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6.5Ω ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Ideal for high-frequency switching and synchronous rectification ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 1.6 IDM Drain Current-Single Pulsed 2.5 PD Total Dissipation @TC=25℃ 43 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to
IXTP1R6N50P Datasheet
