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IXTP1R6N50P - Power MOSFET

Download the IXTP1R6N50P datasheet PDF. This datasheet also covers the IXTY1R6N50P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTY1R6N50P_IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP1R6N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP1R6N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM Power MOSFET IXTY1R6N50P IXTP1R6N50P VDSS = 500V ID25 = 1.6A RDS(on)  6.5 N-Channel Enhancement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VD...

View more extracted text
ement Mode Avalanche Rated TO-252 Fast Intrinsic Rectifier Symbol E VDSS VDGR T VGSS VGSM ID25 IDM E IA EAS dv/dt L PD TJ TJM O Tstg TL TSOLD S FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 1.6 2.5 1.6 75 10 43 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W  C  C  C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP1R6N50P N-Channel MOSFET INCHANGE
IXYS Corporation Logo IXTP1R6N50D2 N-Channel MOSFET IXYS Corporation

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