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isc P-Channel MOSFET Transistor
IXTP28P065T
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATION ·Hight side switching ·Current regulators ·Automatic test equipment
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
-65
VGS
Gate-Source Voltage
±15
ID
Drain Current-Continuous
-28
IDM
Drain Current-Single Pulsed
-90
PD
Total Dissipation @TC=25℃
83
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(j-c)
Channel-to-case thermal resistance
MAX 1.5
UNIT ℃/W
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IXTP28P065T Datasheet
