IXTP28P065T Datasheet | Specifications & PDF Download

isc P-Channel MOSFET Transistor IXTP28P065T ·FEATURES ·Static drain-source on-resistance: RDS(on)≤45mΩ ·100% avalanche tested ·Minimum Lot-to-Lot va

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TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTA28P065T IXTP28P065T VDSS = ID25 = ≤ RDS(on) - 65V - 28A 45mΩ TO-263 AA (IXT

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