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IXTP2N80 - N-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤ 6.2Ω@VGS=10V.
Fully characterized avalanche voltage and current.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

Inchange Semiconductor

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IXTP2N80 N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – IXTP2N80

Datasheet Details

Part number	IXTP2N80
Manufacturer	Inchange Semiconductor
File Size	246.78 KB
Description	N-Channel MOSFET
Datasheet	IXTP2N80 Datasheet
Additional preview pages of the IXTP2N80 datasheet.

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isc N-Channel MOSFET Transistor IXTP2N80 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 6.

Published: Nov 16, 2020 |