IXTP2N80 Datasheet | IXYS

Features Maximum lead temperature for soldering Ÿ International standard packages Ÿ Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Low package inductance (< 5 n H) - easy to drive and to protect Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 5.5 ±100 TJ = 125°C 25 500 6.2 V V n A µA µA Ω Applications VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V Ÿ Switch-mode and resonant-mode power supplies Ÿ Flyback inverters Ÿ DC choppers Advantages VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Ÿ Space savings Ÿ High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98541A 03/24/00 © 2000 IXYS All rights reserved 1-2 IXTA 2N80 IXTP 2N80 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1.0 2.0 440 VGS = 0 V, VDS = 25 V, f = 1 MHz 56 15 15 VGS = 10 V, VDS = 0.5 - VDSS, ID = 0.5 ID25 RG = 18Ω, (External) 18 30 15 22 VGS = 10 V, VDS = 0.5 - VDSS, ID = 0.5 ID25 5.5 12 2.3 (IXTP) 0.5 S p F p F p F ns ns ns ns Dim. Millimeter Min. Max. 4.06 2.03 0.51 1.14 0.46 1.14 8.64 7.11 9.65 6.86 2.54 14.61 2.29 1.02 1.27 0 0.46 4.83 2.79 0.99 1.40 0.74 1.40 9.65 8.13 10.29 8.13 BSC 15.88 2.79 1.40 1.78 0.38 0.74 Inches Min. Max. .160 .080 .020 .045 .018 .045 .340 .280 .380 .270 .100 .575 .090 .040 .050 0 .018 .190 .110 .039 .055 .029 .055 .380 .320 .405 .320 BSC .625 .110 .055 .070 .015 .029 TO-263 AA (IXTA) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd Rth JC Rth CK VDS = 20 V; ID = 0.5 - ID25, pulse test n C n C n C K/W K/W A A1 b b2 c c2 D D1 E E1 e Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2 8 1.8 510 A A V ns L L1 L2 L3 L4 R Repetitive; pulse width limited by TJM IF =...