Full PDF Text Transcription for IXTP48P05T (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXTP48P05T . For precise diagrams, and layout, please refer to the original PDF.
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤30mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to...
View more extracted text
ment mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High-Side Switching ·Push Pull Amplifiers ·DC Choppers z Automatic Test Equipment ·Current Regulators z Battery Charger Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 50 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 150 Tj Max.
📁 Similar Datasheet
Brand Logo
Part Number
Description
Manufacturer
IXTP48P05T
Power MOSFET
IXYS
More Datasheets from Inchange Semiconductor
IXTP48P05T Datasheet
