IXTP48P05T - TO-220C P-Channel MOSFET

Features

Static drain-source on-resistance: RDS(on) ≤30mΩ.
Enhancement mode.
Fast Switching Speed.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXTP48P05T
Manufacturer	Inchange Semiconductor
File Size	243.29 KB
Description	TO-220C P-Channel MOSFET
Datasheet	IXTP48P05T Datasheet
Additional preview pages of the IXTP48P05T datasheet.

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Full PDF Text Transcription

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isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤30mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High-Side Switching ·Push Pull Amplifiers ·DC Choppers z Automatic Test Equipment ·Current Regulators z Battery Charger Applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 50 VGS Gate-Source Voltage ±15 ID Drain Current-Continuous 48 IDM Drain Current-Single Pulsed 150 PD Total Dissipation @TC=25℃ 150 Tj Max.

Published: Oct 13, 2020 |