Full PDF Text Transcription for IXTP4N70X2M (Reference)
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IXTP4N70X2M. For precise diagrams, and layout, please refer to the original PDF.
n-resistance: RDS(on) ≤ 850mΩ@VGS=10V ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converters ·AC and DC Motor Drives ·Switch-Mode and Resonant-Mode Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 700 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 4 IDM Drain Current-Single Pulsed 8 PD Total Dissipation @TC=25℃ 30 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Junction-to-case thermal res
IXTP4N70X2M Datasheet
