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IXTP4N70X2 - Power MOSFET

Download the IXTP4N70X2 datasheet PDF. This datasheet also covers the IXTU4N70X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • Low RDS(ON) and QG.
  • Avalanche Rated.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTU4N70X2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP4N70X2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP4N70X2. For precise diagrams, and layout, please refer to the original PDF.

Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode IXTU4N70X2 IXTY4N70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 =  RDS(on) 700V 4A 850m TO-25...

View more extracted text
70X2 IXTA4N70X2 IXTP4N70X2 VDSS = ID25 =  RDS(on) 700V 4A 850m TO-251 (IXTU) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 700 V 700 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 4 8 2 150 50 80 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263 & TO-251) 10..65 / 2.2..14.6 Mounting Torque

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
INCHANGE Logo IXTP4N70X2 N-Channel MOSFET INCHANGE
INCHANGE Logo IXTP4N70X2M N-Channel MOSFET INCHANGE

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